Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247

Description

Maximum Power Dissipation: 416 W

Maximum Collector Emitter Voltage: 650 V

Number of Transistors: 1

Maximum Continuous Collector Current: 50 A

Maximum Gate Emitter Voltage: ±20V

Package Type: TO-247

Configuration: Single Diode

This is Single Diode IGBT 50 A 650 V TO-247 manufactured by Bourns. The manufacturer part number is BIDW50N65T. Provides up to 416 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product has a maximum 50 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. The product is available in single diode configuration.