Dual N-Channel MOSFET Transistor & Diode, 12 A, 40 V, 3-Pin PG-TO263 Infineon IPB015N04NGATMA1

Description

Maximum Drain Source Voltage: 40 V

Mounting Type: Surface Mount

Channel Mode: Enhancement

Series: OptiMOS™ 3

Channel Type: N

Maximum Gate Threshold Voltage: 4V

Maximum Drain Source Resistance: 0.0015 O

Package Type: D2PAK (TO-263)

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 12 A

Pin Count: 3

This is Dual N-Channel MOSFET Transistor & Diode 12 A 40 V 3-Pin PG-TO263 manufactured by Infineon. The manufacturer part number is IPB015N04NGATMA1. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™ 3, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.0015 o maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 12 a of maximum continuous drain current. It contains 3 pins.