Dual N-Channel MOSFET Transistor & Diode, 97 A, 650 V, 3-Pin PG-TO 247 Infineon IPW60R090CFD7XKSA1

Description

Maximum Drain Source Voltage: 650 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Series: CoolMOS™

Channel Type: N

Maximum Gate Threshold Voltage: 4.5V

Maximum Drain Source Resistance: 0.09 O

Package Type: TO-247

Number of Elements per Chip: 2

Maximum Continuous Drain Current: 97 A

Pin Count: 3

This is Dual N-Channel MOSFET Transistor & Diode 97 A 650 V 3-Pin PG-TO 247 manufactured by Infineon. The manufacturer part number is IPW60R090CFD7XKSA1. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 0.09 o maximum drain source resistance. The package is a sort of to-247. It consists of 2 elements per chip. While 97 a of maximum continuous drain current. It contains 3 pins.