Dual Silicon N-Channel MOSFET, 21 A, 650 V, 8-Pin PowerPAK 10 x 12 Vishay SIHK125N60EF-T1GE3

Description

Maximum Drain Source Voltage: 650 V

Mounting Type: PCB Mount

Channel Mode: Enhancement

Channel Type: N

Package Type: PowerPAK 10 x 12

Number of Elements per Chip: 2

Maximum Continuous Drain Current: 21 A

Transistor Material: Silicon

Pin Count: 8

This is Dual Silicon N-Channel MOSFET 21 A 650 V 8-Pin PowerPAK 10 x 12 manufactured by Vishay. The manufacturer part number is SIHK125N60EF-T1GE3. It has a maximum of 650 v drain source voltage. The product is available in pcb mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of powerpak 10 x 12. It consists of 2 elements per chip. While 21 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 8 pins.