Dual Silicon N-Channel MOSFET, 35 A, 600 V, 3-Pin D2PAK Vishay SIHB080N60E-GE3

Description

Maximum Drain Source Voltage: 600 V

Mounting Type: Surface Mount

Channel Mode: Enhancement

Channel Type: N

Package Type: TO-263

Number of Elements per Chip: 2

Maximum Continuous Drain Current: 35 A

Transistor Material: Silicon

Pin Count: 3

This is Dual Silicon N-Channel MOSFET 35 A 600 V 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is SIHB080N60E-GE3. It has a maximum of 600 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of to-263. It consists of 2 elements per chip. While 35 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.