Fairchild FQP44N10 N-channel MOSFET, 43 A, 100 V QFET, 3-Pin TO-220AB

Description

Category: Power MOSFET

Dimensions: 10.1 x 4.7 x 9.4mm

Maximum Continuous Drain Current: 43 A

Transistor Material: Si

Width: 4.7mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 100 V

Package Type: TO-220AB

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2V

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 48 nC @ 10 V

Channel Type: N Typical Input Capacitance @ Vds: 1400 pF @ 25 V Length: 10.1mm Pin Count: 3 Typical Turn-Off Delay Time: 90 ns Mounting Type: Through Hole Channel Mode: Enhancement Maximum Power Dissipation: 146 W Series: QFET Maximum Gate Source Voltage: ±25 V Height: 9.4mm Typical Turn-On Delay Time: 19 ns Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 39 mΩ FET Feature: – HTSUS: 8542.39.0001 Vgs(th) (Max) @ Id: 4V @ 250µA Operating Temperature: -55°C ~ 175°C (TJ) Package / Case: TO-220-3 Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10V Package: Bulk Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±25V Power Dissipation (Max): 146W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 VMounting Type: Through Hole Series: QFET® Supplier Device Package: TO-220-3 Current – Continuous Drain (Id) @ 25°C: 43.5A (Tc) Technology: MOSFET (Metal Oxide) ECCN: EAR99

This is Fairchild N-channel MOSFET 43 A 100 V QFET 3-Pin TO-220AB manufactured by Fairchild Semiconductor. The manufacturer part number is FQP44N10. It is of power mosfet category . The given dimensions of the product include 10.1 x 4.7 x 9.4mm. While 43 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.7mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 48 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1400 pf @ 25 v . Its accurate length is 10.1mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 90 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 146 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±25 v. In addition, the height is 9.4mm. In addition, it has a typical 19 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 39 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 62 nc @ 10 v. It has a maximum Rds On and voltage of 39mohm @ 21.75a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±25v. The product carries maximum power dissipation 146w (tc). The product’s input capacitance at maximum includes 1800 pf @ 25 v. The product qfet®, is a highly preferred choice for users. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 43.5a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.