Infineon IKW50N65EH5XKSA1 Single IGBT, 80 A 650 V, 3-Pin PG-TO247

Description

Maximum Power Dissipation: 275 W

Maximum Collector Emitter Voltage: 650 V

Number of Transistors: 1

Channel Type: N

Maximum Continuous Collector Current: 80 A

Maximum Gate Emitter Voltage: 30V

Package Type: PG-TO247

Configuration: Single

Pin Count: 3

This is Single IGBT 80 A 650 V 3-Pin PG-TO247 manufactured by Infineon. The manufacturer part number is IKW50N65EH5XKSA1. Provides up to 275 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum 30v gate emitter voltage . The package is a sort of pg-to247. The product is available in single configuration. It contains 3 pins.