Infineon IKZ50N65ES5XKSA1 P-channel IGBT, 80 A 650 V, 4-Pin TO-247

Description

Dimensions: 15.9 x 5.1 x 22.5mm

Mounting Type: Through Hole

Maximum Power Dissipation: 274 W

Maximum Collector Emitter Voltage: 650 V

Number of Transistors: 1

Channel Type: P

Maximum Continuous Collector Current: 80 A

Maximum Gate Emitter Voltage: ±30V

Package Type: TO-247

Minimum Operating Temperature: -40 °C

Switching Speed: 40kHz

Gate Capacitance: 3100pF

Maximum Operating Temperature: +175 °C Pin Count: 4 Energy Rating: 1.65mJ Transistor Configuration: Single

This is P-channel IGBT 80 A 650 V 4-Pin TO-247 manufactured by Infineon. The manufacturer part number is IKZ50N65ES5XKSA1. The given dimensions of the product include 15.9 x 5.1 x 22.5mm. The product is available in through hole configuration. Provides up to 274 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum ±30v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -40 °c. It has about 40khz switching speed . It has approximately 3100pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 4 pins. It has approximately 1.65mj energy rating . The product offers single transistor configuration.