Infineon IRFP7530PBF N-channel MOSFET, 195 A, 60 V StrongIRFET, 3-Pin TO-247

Description

Maximum Continuous Drain Current: 195 A

Transistor Material: Si

Width: 5.31mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 60 V

Maximum Gate Threshold Voltage: 3.7V

Package Type: TO-247

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2.1V

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 274 nC @ 10 V

Channel Type: N

Length: 15.87mm Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 341 W Series: StrongIRFET Maximum Gate Source Voltage: -20 V, +20 V Height: 20.7mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.2V Maximum Drain Source Resistance: 2 mΩ

This is N-channel MOSFET 195 A 60 V StrongIRFET 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is IRFP7530PBF. While 195 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.31mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 3.7v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 274 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.87mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 341 w maximum power dissipation. The product strongirfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 20.7mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 2 mω maximum drain source resistance.