N-Channel MOSFET, 28 A, 300 V, 3-Pin D2PAK onsemi FDB28N30TM

Description

Maximum Continuous Drain Current: 28 A

Transistor Material: Si

Width: 11.33mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 300 V

Package Type: D2PAK (TO-263)

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 3V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 39 nC @ 10 V

Channel Type: N

Length: 10.67mm

Pin Count: 3 Channel Mode: Enhancement Mounting Type: Surface Mount Maximum Power Dissipation: 250 W Series: UniFET Maximum Gate Source Voltage: -30 V, +30 V Height: 4.83mm Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 129 mΩ FET Feature: – HTSUS: 8541.29.0095 Vgs(th) (Max) @ Id: 5V @ 250µA Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Rds On (Max) @ Id, Vgs: 129mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V RoHS Status: ROHS3 Compliant REACH Status: REACH Unaffected FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10VPackage: Tape & Reel (TR) Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±30V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 250W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V standardLeadTime: 9 Weeks Mounting Type: Surface Mount Series: UniFET™ Supplier Device Package: TO-263 (D2PAK) Current – Continuous Drain (Id) @ 25°C: 28A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: FDB28N30 ECCN: EAR99

This is N-Channel MOSFET 28 A 300 V 3-Pin D2PAK manufactured by onsemi. The manufacturer part number is FDB28N30TM. While 28 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 11.33mm wide. The product offers single transistor configuration. It has a maximum of 300 v drain source voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 39 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 250 w maximum power dissipation. The product unifet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 4.83mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 129 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 129mohm @ 14a, 10v. The maximum gate charge and given voltages include 50 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 300 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 250w (tc). The product’s input capacitance at maximum includes 2250 pf @ 25 v. It has a long 9 weeks standard lead time. The product unifet™, is a highly preferred choice for users. to-263 (d2pak) is the supplier device package value. The continuous current drain at 25°C is 28a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdb28n30, a base product number of the product. The product is designated with the ear99 code number.