N-Channel MOSFET, 80 A, 40 V D2PAK Infineon IPB80N04S2H4ATMA2

Description

Maximum Drain Source Voltage: 40 V

Maximum Continuous Drain Current: 80 A

Mounting Type: Surface Mount

Series: CoolMOS™

Channel Type: N

Maximum Gate Threshold Voltage: 4V

Maximum Drain Source Resistance: 3.7 mO

Package Type: D2PAK (TO-263)

Number of Elements per Chip: 1

Pin Count: 3

This is N-Channel MOSFET 80 A 40 V D2PAK manufactured by Infineon. The manufacturer part number is IPB80N04S2H4ATMA2. It has a maximum of 40 v drain source voltage. While 80 a of maximum continuous drain current. The product is available in surface mount configuration. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 3.7 mo maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. It contains 3 pins.