Nch 60V 80A Power MOSFET

Description

Maximum Continuous Drain Current: 80 A

Width: 9.2mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 60 V

Maximum Gate Threshold Voltage: 2.5V

Package Type: TO-263AB

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 1V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 55 nC @ 10 V

Channel Type: N

Length: 10.4mm

Pin Count: 3 Channel Mode: Enhancement Mounting Type: Surface Mount Maximum Power Dissipation: 96 W Series: RJ1L08CGN Maximum Gate Source Voltage: ±20 V Height: 4.7mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.2V Maximum Drain Source Resistance: 7.7 mΩ

This is Nch 60V 80A Power MOSFET manufactured by ROHM. The manufacturer part number is RJ1L08CGNTLL. While 80 a of maximum continuous drain current. Furthermore, the product is 9.2mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of to-263ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 55 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.4mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 96 w maximum power dissipation. The product rj1l08cgn, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.7mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 7.7 mω maximum drain source resistance.