ON Semiconductor FJPF13009H1TU

Description

Transistor Type: NPN

Dimensions: 10.36 x 4.9 x 16.07mm

Mounting Type: Through Hole

Maximum Power Dissipation: 50 W

Maximum Collector Emitter Saturation Voltage: 3 V

Maximum Collector Base Voltage: 700 V

Maximum Collector Emitter Voltage: 400 V

Maximum Base Emitter Saturation Voltage: 1.6 V

Maximum Operating Frequency: 4 MHz

Maximum Emitter Base Voltage: 9 V

Package Type: TO-220

Number of Elements per Chip: 1

Maximum DC Collector Current: 12 A Maximum Operating Temperature: +150 °C Pin Count: 3 Transistor Configuration: Single Manufacturer Standard Lead Time: 8 Weeks Base Part Number: FJPF13009 Detailed Description: Bipolar (BJT) Transistor NPN 400V 12A 4MHz 50W Through Hole TO-220F-3 (Y-Forming) Transistor Type: NPN Frequency – Transition: 4MHz Mounting Type: Through Hole Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A Supplier Device Package: TO-220F-3 (Y-Forming) Voltage – Collector Emitter Breakdown (Max): 400V Packaging: Tube Operating Temperature: 150°C (TJ) Power – Max: 50W Customer Reference: Package / Case: TO-220-3 Full Pack, Formed Leads Current – Collector (Ic) (Max): 12A DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 8A, 5V Manufacturer: ON Semiconductor

This ismanufactured by ON Semiconductor. The manufacturer part number is FJPF13009H1TU. The transistor is a npn type. The given dimensions of the product include 10.36 x 4.9 x 16.07mm. The product is available in through hole configuration. Provides up to 50 w maximum power dissipation. The product has a maximum 3 v collector emitter saturation voltage . Additionally, it has 700 v maximum collector base voltage. Whereas features a 400 v of collector emitter voltage (max). In addition, the product has a maximum 1.6 v base emitter saturation voltage . It carries 4 mhz of maximum operating frequency. It features a 9 v of maximum emitter base voltage. The package is a sort of to-220. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 12 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 8 weeks of manufacturer standard lead time. Base Part Number: fjpf13009. It features bipolar (bjt) transistor npn 400v 12a 4mhz 50w through hole to-220f-3 (y-forming). The transition frequency of the product is 4mhz. The 3v @ 3a, 12a is the maximum Vce saturation. to-220f-3 (y-forming) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 400v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 50w. Moreover, the product comes in to-220-3 full pack, formed leads. The maximum collector current includes 12a. Furthermore, 6 @ 8a, 5v is the minimum DC current gain at given voltage. The on semiconductor’s product offers user-desired applications.