P-Channel MOSFET, 51 A, 30 V, 8-Pin MLP onsemi FDMC6679AZ

Description

Maximum Continuous Drain Current: 51 A

Transistor Material: Si

Width: 3.3mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 30 V

Package Type: MicroFET 2 x 2

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 1V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 65 nC @ 10 V

Channel Type: P

Length: 3.3mm

Pin Count: 8 Channel Mode: Enhancement Mounting Type: Surface Mount Maximum Power Dissipation: 41 W Series: PowerTrench Maximum Gate Source Voltage: -25 V, +25 V Height: 0.75mm Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 18 mΩ FET Feature: – HTSUS: 8541.29.0095 RoHS Status: ROHS3 Compliant Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: 8-PowerWDFN Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V title: FDMC6679AZ Vgs(th) (Max) @ Id: 3V @ 250µA REACH Status: REACH Unaffected FET Type: P-Channel Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 15 V Mounting Type: Surface Mount Series: PowerTrench® Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Supplier Device Package: 8-MLP (3.3×3.3) Packaging: Tape & Reel (TR) Current – Continuous Drain (Id) @ 25°C: 11.5A (Ta), 20A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: FDMC6679 ECCN: EAR99

This is P-Channel MOSFET 51 A 30 V 8-Pin MLP manufactured by onsemi. The manufacturer part number is FDMC6679AZ. While 51 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.3mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of microfet 2 x 2. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 65 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.3mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 41 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 0.75mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 18 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powerwdfn. It has a maximum Rds On and voltage of 10mohm @ 11.5a, 10v. The typical Vgs (th) (max) of the product is 3v @ 250µa. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 30 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2.3w (ta), 41w (tc). The product’s input capacitance at maximum includes 3970 pf @ 15 v. The product powertrench®, is a highly preferred choice for users. The maximum gate charge and given voltages include 91 nc @ 10 v. 8-mlp (3.3×3.3) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 11.5a (ta), 20a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdmc6679, a base product number of the product. The product is designated with the ear99 code number.