ROHM R6024KNZ1C9 N-channel MOSFET, 24 A, 600 V, 3-Pin TO-247

Description

Maximum Continuous Drain Current: 24 A

Width: 5.21mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 600 V

Maximum Gate Threshold Voltage: 5V

Package Type: TO-247

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 3V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 45 nC @ 10 V

Channel Type: N

Length: 16.13mm

Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 245 W Maximum Gate Source Voltage: ±20 (Static) V, ±30 V Height: 21.34mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.5V Maximum Drain Source Resistance: 320 mΩ

This is N-channel MOSFET 24 A 600 V 3-Pin TO-247 manufactured by ROHM. The manufacturer part number is R6024KNZ1C9. While 24 a of maximum continuous drain current. Furthermore, the product is 5.21mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 45 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 16.13mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 245 w maximum power dissipation. It features a maximum gate source voltage of ±20 (static) v, ±30 v. In addition, the height is 21.34mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 320 mω maximum drain source resistance.