Silicon N-Channel MOSFET, 17 A, 800 V, 3-Pin PG-TO 220 FullPAK – Narrow Lead Infineon IPAN80R280P7XKSA1

Description

Maximum Drain Source Voltage: 800 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Series: CoolMOS™

Channel Type: N

Maximum Gate Threshold Voltage: 3.5V

Maximum Drain Source Resistance: 0.28 Ω

Package Type: TO-220 FP

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 17 A

Transistor Material: Silicon

Pin Count: 3

This is Silicon N-Channel MOSFET 17 A 800 V 3-Pin PG-TO 220 FullPAK – Narrow Lead manufactured by Infineon. The manufacturer part number is IPAN80R280P7XKSA1. It has a maximum of 800 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 0.28 ω maximum drain source resistance. The package is a sort of to-220 fp. It consists of 1 elements per chip. While 17 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.