Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS Toshiba TK090A65Z,S4X(S

Description

Maximum Drain Source Voltage: 650 V

Maximum Continuous Drain Current: 30 A

Channel Mode: Enhancement

Series: TK090A65Z

Channel Type: N

Maximum Gate Threshold Voltage: 4V

Maximum Drain Source Resistance: 0.09 Ω

Package Type: TO-220SIS

Number of Elements per Chip: 1

Transistor Material: Silicon

Pin Count: 3

This is Silicon N-Channel MOSFET 30 A 650 V 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TK090A65Z,S4X(S. It has a maximum of 650 v drain source voltage. While 30 a of maximum continuous drain current. The product carries enhancement channel mode. The product tk090a65z, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.09 ω maximum drain source resistance. The package is a sort of to-220sis. It consists of 1 elements per chip. The transistor is manufactured from highly durable silicon material. It contains 3 pins.