Silicon N-Channel MOSFET, 31 A, 650 V, 3-Pin PG-TO 263-3 Infineon IPB60R099P7ATMA1

Description

Maximum Drain Source Voltage: 650 V

Mounting Type: Surface Mount

Channel Mode: Enhancement

Series: CoolMOS™

Channel Type: N

Maximum Gate Threshold Voltage: 4V

Maximum Drain Source Resistance: 0.099 Ω

Package Type: TO 263

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 31 A

Transistor Material: Silicon

Pin Count: 3

This is Silicon N-Channel MOSFET 31 A 650 V 3-Pin PG-TO 263-3 manufactured by Infineon. The manufacturer part number is IPB60R099P7ATMA1. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.099 ω maximum drain source resistance. The package is a sort of to 263. It consists of 1 elements per chip. While 31 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.