STMicroelectronics STB57N65M5

Description

Maximum Continuous Drain Current: 42 A

Transistor Material: Si

Width: 9.35mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 710 V

Maximum Gate Threshold Voltage: 5V

Package Type: D2PAK (TO-263)

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 3V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 98 nC @ 10 V

Channel Type: N

Length: 10.4mm Pin Count: 3 Channel Mode: Enhancement Mounting Type: Surface Mount Maximum Power Dissipation: 250 W Series: MDmesh M5 Maximum Gate Source Voltage: -25 V, +25 V Height: 4.6mm Maximum Drain Source Resistance: 63 mΩ FET Feature: – HTSUS: 8541.29.0095 RoHS Status: ROHS3 Compliant Operating Temperature: 150°C (TJ) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V title: STB57N65M5 Vgs(th) (Max) @ Id: 5V @ 250µA REACH Status: REACH Unaffected edacadModel: STB57N65M5 Models FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10V edacadModelUrl: /en/models/3474299 Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 250W (Tc) standardLeadTime: 14 Weeks Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V Mounting Type: Surface Mount Series: MDmesh™ V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Supplier Device Package: TO-263 (D2PAK) Packaging: Tape & Reel (TR) Current – Continuous Drain (Id) @ 25°C: 42A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: STB57 ECCN: EAR99

This ismanufactured by STMicroelectronics. The manufacturer part number is STB57N65M5. While 42 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.35mm wide. The product offers single transistor configuration. It has a maximum of 710 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 98 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.4mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 250 w maximum power dissipation. The product mdmesh m5, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 4.6mm. It provides up to 63 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 63mohm @ 21a, 10v. The typical Vgs (th) (max) of the product is 5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 250w (tc). It has a long 14 weeks standard lead time. The product’s input capacitance at maximum includes 4200 pf @ 100 v. The product mdmesh™ v, is a highly preferred choice for users. The maximum gate charge and given voltages include 98 nc @ 10 v. to-263 (d2pak) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 42a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stb57, a base product number of the product. The product is designated with the ear99 code number.