STMicroelectronics STF100N10F7

Description

Maximum Continuous Drain Current: 45 A

Transistor Material: Si

Width: 4.6mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 100 V

Maximum Gate Threshold Voltage: 4V

Package Type: TO-220FP

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2V

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 61 nC @ 10 V

Channel Type: N

Length: 10.4mm Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 30 W Series: STripFET H7 Maximum Gate Source Voltage: -20 V, +20 V Height: 16.4mm Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 8 mΩ FET Feature: – HTSUS: 8541.29.0095 Vgs(th) (Max) @ Id: 4.5V @ 250µA Operating Temperature: -55°C ~ 175°C (TJ) Package / Case: TO-220-3 Full Pack Rds On (Max) @ Id, Vgs: 8mOhm @ 22.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V RoHS Status: ROHS3 Compliant REACH Status: REACH Unaffected edacadModel: STF100N10F7 Models FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10V edacadModelUrl: /en/models/4250528Package: Tube Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 30W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V standardLeadTime: 32 Weeks Mounting Type: Through Hole Series: DeepGATE™, STripFET™ VII Supplier Device Package: TO-220FP Current – Continuous Drain (Id) @ 25°C: 45A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: STF100 ECCN: EAR99

This ismanufactured by STMicroelectronics. The manufacturer part number is STF100N10F7. While 45 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.6mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220fp. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 61 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.4mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 30 w maximum power dissipation. The product stripfet h7, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 16.4mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 8 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 8mohm @ 22.5a, 10v. The maximum gate charge and given voltages include 61 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 30w (tc). The product’s input capacitance at maximum includes 4369 pf @ 50 v. It has a long 32 weeks standard lead time. The product deepgate™, stripfet™ vii, is a highly preferred choice for users. to-220fp is the supplier device package value. The continuous current drain at 25°C is 45a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stf100, a base product number of the product. The product is designated with the ear99 code number.