STMicroelectronics STO67N60DM6

Description

Maximum Drain Source Voltage: 600 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Series: STO67N60DM6

Channel Type: N

Maximum Gate Threshold Voltage: 25V

Maximum Drain Source Resistance: 59 mΩ

Package Type: TO-220

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 33 A

Transistor Material: Si

Pin Count: 3

FET Feature: – HTSUS: 8541.29.0095 Vgs(th) (Max) @ Id: 4.75V @ 250µA Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: 8-PowerSFN Rds On (Max) @ Id, Vgs: 59mOhm @ 23.75A, 10V Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V RoHS Status: ROHS3 Compliant REACH Status: REACH Unaffected edacadModel: STO67N60DM6 Models FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10V edacadModelUrl: /en/models/13145240Package: Tape & Reel (TR) Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 150W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V standardLeadTime: 16 Weeks Mounting Type: Surface Mount Series: MDmesh™ DM6 Supplier Device Package: TOLL (HV) Current – Continuous Drain (Id) @ 25°C: 33A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: STO67 ECCN: EAR99

This ismanufactured by STMicroelectronics. The manufacturer part number is STO67N60DM6. It has a maximum of 600 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product sto67n60dm6, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 25v of maximum gate threshold voltage. It provides up to 59 mω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. While 33 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.75v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powersfn. It has a maximum Rds On and voltage of 59mohm @ 23.75a, 10v. The maximum gate charge and given voltages include 72.5 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 150w (tc). The product’s input capacitance at maximum includes 3400 pf @ 100 v. It has a long 16 weeks standard lead time. The product is available in surface mount configuration. The product mdmesh™ dm6, is a highly preferred choice for users. toll (hv) is the supplier device package value. The continuous current drain at 25°C is 33a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sto67, a base product number of the product. The product is designated with the ear99 code number.