Toshiba TK20J60W,S1VQ(O N-channel MOSFET, 20 A, 600 V TK, 3-Pin TO-3P

Description

Maximum Drain Source Voltage: 600 V

Typical Gate Charge @ Vgs: 48 nC @ 10 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Maximum Power Dissipation: 165 W

Series: TK

Maximum Gate Source Voltage: -30 V, +30 V

Maximum Gate Threshold Voltage: 3.7V

Height: 20mm

Width: 4.5mm

Length: 15.5mm

Maximum Drain Source Resistance: 155 mΩ

Package Type: TO-3PN Number of Elements per Chip: 1 Maximum Continuous Drain Current: 20 A Transistor Material: Si Channel Type: N Maximum Operating Temperature: +150 °C Pin Count: 3 Transistor Configuration: Single

This is N-channel MOSFET 20 A 600 V TK 3-Pin TO-3P manufactured by Toshiba. The manufacturer part number is TK20J60W,S1VQ(O. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 48 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 165 w maximum power dissipation. The product tk, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 3.7v of maximum gate threshold voltage. In addition, the height is 20mm. Furthermore, the product is 4.5mm wide. Its accurate length is 15.5mm. It provides up to 155 mω maximum drain source resistance. The package is a sort of to-3pn. It consists of 1 elements per chip. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.